Vincent Favre-Nicolin@Google Scholar

• Thin Solid Films (2016) S. Fernández, M.I. Richard, D. Floettoto, G. Richter, O. Mandula, M. Elzo Aizarnaa, V. Favre-Nicolin, M. Burghammer, T. Schülli, O. Thomas X-ray nanodiffraction in forward scattering and Bragg geometry of a single isolated Ag-Au nanowire

• Appl. Phys. Lett. 108, 031903 (2016) H. Palancher, P. Goudeau, A. Boulle, F. Rieutord, V. Favre-Nicolin, N. Blanc, G. Martin Strain profiles in ion implanted ceramic polycrystals: An approach based on reciprocal-space crystal selection

• RSC Adv. 2016,6, 28248-28256 Demchenko, A. and Chang, Y. and Chikoidze, E. and Berini, B. and Lefevre, C. and Roulland, F. and Ulhaq-Bouillet, C. and Versini, G. and Barre, S. and Leuvrey, C. and Favre-Nicolin, V. and Boudet, N. and Zafeiratos, S. and Dumont, Y. and Viart, N. Tuning the conductivity type in a room temperature magnetic oxide: Ni-doped Ga0.6Fe1.4O3 thin films

• Appl. Phys. Lett. 106 (2015), 12108 M.-I. Richard, A. Malachias, T.U. Schülli, V. Favre-Nicolin, Z. Zhong, T.H. Metzger, G. Renaud Ordered domain lateral location, symmetry, and thermal stability in Ge: Si islands

• UltraMicroscopy (2014) Y. Martin, J.L. Rouvière, J.M. Zuo, V. Favre-Nicolin Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction

• Surface Science 624 (2014) 130-134 B. Gobaut,J. Penuelas, A. Benamrouche, Y. Robach, N. Blanc, V. Favre-Nicolin, G. Renaud, L. Largeau, G. Saint-Girons Growth of Ge islands on SrTiO3 (001) 2 × 1 reconstructed surface: Epitaxial relationship and effect of the temperature

• Appl. Phys. Lett. 104, 102409 (2014) E. Prestat, C. Porret, V. Favre-Nicolin, D. Tainoff, M. Boukhari, P. Bayle-Guillemaud, M. Jamet and A. Barski Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

• Phys. Rev. Lett. 111 (2013), 215502 F. Mastropietro, J. Eymery, G. Carbone, S. Baudot, F. Andrieu, and V. Favre-Nicolin Time-Dependent Relaxation of Strained Silicon-on-Insulator Lines Using a Partially Coherent X-Ray Nanobeam arXiv:1306.3367

• Nano Lett. 13 (2013), 1883-1889 Sabine T. Haag , Marie-Ingrid Richard, Udo Welzel, Vincent Favre-Nicolin, Olivier Balmes, Gunther Richter, Eric J. Mittemeijer, and Olivier Thomas Concentration and Strain Fields inside a Ag/Au Core–Shell Nanowire Studied by Coherent X-ray Diffraction

• Appl. Phys. Lett. 103 (2013), 021602 A. Danescu, B. Gobaut, J. Penuelas, G. Grenet, V. Favre-Nicolin, N. Blanc, T. Zhou, G. Renaud, and G. Saint-Girons Interface accommodation mechanism for weakly interacting epitaxial systems

• Thin Solid Films (2013) Sabine T Haag, Marie-Ingrid Richard, Vincent Favre-Nicolin, Udo Welzel, Lars PH Jeurgens, Sylvain Ravy, Gunther Richter, Eric J Mittemeijer, Olivier Thomas In situ coherent X-ray diffraction of isolated core-shell nanowires

• Characterization of Semiconductor Heterostructures and Nanostructures, 2nd Edition, Ed. by G. Agostini & C. Lamberti (Elsevier): T. Schülli, V. Favre-Nicolin, M.-I. Richard & G. Renaud Chapter 4: Nanostructures observed by surface sensitive x-ray scattering and highly focused beams

• Nucl Inst. & Meth. Phys. B284 (2012) 58-63 Katcho, NA, Richard, MI, Proietti, MG, Renevier, H, Leclere, C, Favre-Nicolin, V, Zhang, JJ, Bauer, G Diffraction Anomalous Fine Structure study and atomistic simulation of Ge/Si nanoislands

• Eur. Phys. J. Special Topics 208 (2012), 189-216 Favre-Nicolin V., Proietti M.G. ,Leclere C., Katcho N.A., Richard M.-I., Renevier H. Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures

• Phys. Rev. B85 (2012), 115204: E. Arras, F. Lançon, I. Slipukhina, É. Prestat, M. Rovezzi, S. Tardif, A. Titov, P. Bayle-Guillemaud, F. d’Acapito, A. Barski, V. Favre-Nicolin, M. Jamet, J. Cibert, and P. Pochet Interface-driven phase separation in multifunctional materials: The case of the ferromagnetic semiconductor GeMn

• Opt. Express 19 (2011), 19223-19232: F. Mastropietro, D. Carbone, A. Diaz, J. Eymery, A. Sentenac, T.H. Metzger, V. Chamard, and V. Favre-Nicolin Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate

• Phys. Rev. B 84 (2011), 075314: M.-I. Richard, A. Malachias, J.-L. Rouvière, T.-S. Yoon, E. Holmström, Y.-H. Xie, V. Favre-Nicolin, V. Holý, K. Nordlund, G. Renaud, and T.-H. Metzger, Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

• J. Appl. Cryst. 44 (2011), 635-640 V. Favre-Nicolin, J. Coraux, M.-I. Richard, and H. Renevier, Fast computation of scattering maps of nanostructures using graphical processing units arXiv

• EPL 93 (2011) 66004: N. A. Katcho, M.-I. Richard, M. G. Proietti, H. Renevier, C. Leclere, V. Favre-Nicolin, J. J. Zhang and G. Bauer Composition and strain of Ge domes on Si(001) close to the dome/susbtrate interface

• J. Appl. Phys. 109, 013911 (2011): A. Jain, M. Jamet, A. Barski, T. Devillers, I.-S. Yu, C. Porret, P. Bayle-Guillemaud, V. Favre-Nicolin, S. Gambarelli, V. Maurel, G. Desfonds, J. F. Jacquot, and S. Tardif Structure and magnetism of Ge₃Mn₅ clusters

• Phys. Rev. B82 (2010), 104101: S. Tardif, V. Favre-Nicolin, F. Lançon, E. Arras, M. Jamet, A. Barski, C. Porret, P. Bayle-Guillemaud, P. Pochet, T. Devillers, and M. Rovezzi Strain and correlation of self-organized Ge1−xMnx nanocolumns embedded in Ge (001) arXiv:1006.5439

• Diffraction at the Nanoscale - Nanocrystals, Defective & Amorphous Materials (2010) ed. by Antonietta Guagliardi and Norberto Masciocchi, (ISBN 978-88-95362-35-9), Insubria Univ. Press

• New J. Phys. 12 (2010), 035013: V Favre-Nicolin, F Mastropietro, J Eymery, D Camacho, Y M Niquet, B M Borg, M E Messing, L-E Wernersson, R E Algra, E P A M Bakkers, T H Metzger, R Harder and I K Robinson Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

• Phys. Rev. B81 (2010), 153306: O. Landré, D. Camacho, C. Bougerol, Y. M. Niquet, V. Favre-Nicolin, G. Renaud, H. Renevier, B. Daudin Elastic strain relaxation in GaN/AlN nanowire superlattice

• Int. J. Nanotechnol., Vol. 7 (2010), 575: M. Jamet, T. Devillers, I-S. Yu, A. Barski, P. Bayle-Guillemaud, J. Rothman, V. Favre-Nicolin, S. Tardif, S. Cherifi, J. Cibert, L. Grenet, P. Noé and V. Calvo (Ge,Mn): A ferromagnetic semiconductor for spin injection in silicon

• J. Phys.: Conf. Ser. 190 (2010), 012129: N A Katcho, M I Richard, O Landré, G Tourbot, M G Proietti, H Renevier, V Favre-Nicolin, B Daudin, G Chen, J J Zhang and G Bauer Structural properties of Ge/Si(001) nano-islands and AlGaN nanowires by Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction

• Phys. Rev. B79 (2009), 195401 V. Favre-Nicolin, J. Eymery, R.K. Koster, P. Gentile Coherent Diffraction Imaging of Single 95nm Nanowires

• Rayons X & Matière 2007 édité par Philippe Goudeau, René Guinebretière (Eyrolles) - chapitre 4 "Étude de nanostructures de semi-conducteurs par rayonnement synchrotron"

• J. Phys.: Conf. Ser. 190 (2009) 012129 N A Katcho,M I Richard, O Landré, G Tourbot, M G Proietti, H Renevier, V Favre-Nicolin, B Daudin, G Chen,J J Zhang, G Bauer Structural properties of Ge/Si(001) nano-islands and AlGaN nanowires by Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction

• Appl. Phys. Lett. 94 (2009),131911: J. Eymery, V. Favre-Nicolin, L. Fröberg, and L. Samuelson X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

• Eur. Phys. J. 167 (2009),3-10: Richard MI, Katcho NA, Proietti MG, Renevier H, Favre-Nicolin V, Zhong Z, Chen G, Stoffel M, Schmidt O , Renaud G, Schulli TU, Bauer G Structural properties of Ge/Si(001) nano-islands by diffraction anomalous fine structure and multiwavelength anomalous diffraction

• Appl. Phys. Lett. 94 (2009), 13112: Richard MI, Favre-Nicolin V, Renaud G, Schulli TU, Priester C, Zhong Z, Metzger TH Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays

• Structural Chemistry 19 (2008), 517-525:Husak M, Jegorov A, Brus J, van Beek W, Pattison P, Christensen M, Favre-Nicolin V, Maixner J Metergoline II: structure solution from powder diffraction data with preferred orientation and from microcrystal

• Thin Solid Films 517 (2008) 197–200: C. Merckling, G. Saint-Girons, G. Delhaye, G. Patriarche, L. Largeau, V. Favre-Nicollin, M. El-Kazzi, P. Regreny, B. Vilquin, O. Marty, C. Botella, M. Gendry, G. Grenet, Y. Robach, G. Hollinger Epitaxial growth of high-k oxides on silicon

• J. Appl. Phys. 104, 063521 (2008):B. Amstatt, O. Landré, V. Favre Nicolin, M. G. Proietti, E. Bellet-Amalric, C. Bougerol, H. Renevier, and B. Daudin Anisotropic strain state of the [1-100] GaN quantum dots and quantum wires

• Characterization of Semiconductor Heterostructures and Nanostructures, Ed. by C Lamberti: T. Metzger, J. Eymery, V. Favre-Nicolin, G. Renaud, H. Renevier and T. Schülli Chapter 10: Nanostructures in the light of synchrotron radiation: surface sensitive x-ray techniques and anomalous scattering

• Appl. Phys. Lett. 92 (2008), 241907: G. Saint-Girons, C. Priester, P. Regreny, G. Patriarche, L. Largeau, V. Favre-Nicolin, G. Xu, Y. Robach, M. Gendry, and Guy Hollinger Spontaneous compliance of the InP/SrTiO3 heterointerface

• Nano Letters 7 (2007), 2596-2601: Eymery J, Rieutord F, Favre-Nicolin V, Robach O, Niquet YM, Froberg L, Martensson T, Samuelson L Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques

• J. Appl. Phys. 102 (2007), 24101: Merckling C, El-Kazzi M, Saint-Girons G, Hollinger G, Largeau L, Patriarche G, Favre-Nicolin V , Marty O Growth of crystalline gamma-Al₂O₃ on Si by molecular beam epitaxy: Influence of the substrate orientation

• Phys. Status Solidi C, 4 (2007), 2379–2382. A. Cros, J. A. Budagosky, N. Garro, A. Cantarero, J. Coraux, H. Renevier, M. G. Proietti, V. Favre-Nicolin & B. Daudin Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping

• J. Cryst. Growth 306 (2007), 47-51: Merckling C, El-Kazzi M, Delhaye G, Favre-Nicolin V, Robach Y, Gendry M, Grenet G, Saint-Girons G , Hollinger G Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy

• Phys. Rev. B 75 (2007),235312: Coraux J, Favre-Nicolin V, Proietti MG, Daudin B, Renevier H Grazing-incidence diffraction anomalous fine structure: Application to the structural investigation of group-III nitride quantum dots

• Thin Sol. Films 515 (2007), 6479-6483: Merckling C, El-Kazzi M, Favre-Nicolin V, Gendry M, Robach Y, Grenet G, Hollinger G Epitaxial growth and relaxation of gamma-Al2O3 on silicon

• Z. Krist. 222 (2007), 105-113: Cerny R, Favre-Nicolin V Direct space methods of structure determination from powder diffraction: principles, guidelines and perspectives

• J. Appl. Phys. 101 (2007), 56106: Coraux J, Favre-Nicolin V, Renevier H, Proietti MG, Amstatt B, Bellet-Amalric E, Daudin B Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction

• Phys. Rev. B74 (2006),195302: Coraux J, Amstatt B, Budagoski JA, Bellet-Amalric E, Rouviere JL, Favre-Nicolin V, Proietti MG, Renevier H , Daudin B Mechanism of GaN quantum dots capped with AlN: An AFM, electron microscopy, and x-ray anomalous diffraction study

• Appl. Phys. Lett. 89 (2006), 153129: Dujardin R, Poydenot V, Devillers T, Favre-Nicolin V, Gentile P, Barski A Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

• Appl. Phys. Lett. 89 (2006), 143114: Schulli TU, Richard MI, Renaud G, Favre-Nicolin V, Wintersberger E, Bauer G In situ investigation of the island nucleation of Ge on Si(001) using x-ray scattering methods

• Phys. Stat. Sol. B243 (2006), 1519-1523: Coraux J, Renevier H, Proietti MG, Favre-Nicolin V, Daudin B, Renaud G In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AIN quantum dots

• Z Krist. (2006 suppl 23), 411-416: Cerny R, Renaudin G, Tokaychuk Y, Favre-Nicolin V Complex intermetallic compounds in the Mg-Ir system solved by powder diffraction

• Phys Rev B73 (20006), 205343: Coraux J, Proietti MG, Favre-Nicolin V, Renevier H, Daudin B Step-by-step capping and strain state of GaN/AlN quantum dots studied by grazing-incidence diffraction anomalous fine structure

• Nucl Inst. & Meth. Phys. B246 (2006), 58-63: Coraux J, Favre-Nicolin V, Proletti MG, Renevier H, Daudin B Grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots

• Appl. Phys. Lett. 88 (2006), 153125: Coraux J, Renevier H, Favre-Nicolin V, Renaud G, Daudin B In situ resonant x-ray study of vertical correlation and capping effects during GaN/AlN quantum dot growth

• Powder Diffr. 20 (2005), 359-365: Cerny R, Favre-Nicolin V FOX: A friendly tool to solve nonmolecular structures from powder diffraction

• Phys. B: Cond. Matt 357 (2005), 11-15: Letoublon A, Favre-Nicolin V, Renevier H, Proletti MG, Monat C, Gendry M, Marty O, Priester C Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

• Z. Krist. 219 (2004), 847-856: Favre-Nicolin- V, Cerny R A better FOX: using flexible modelling and maximum likelihood to improve direct-space ab initio structure determination from powder diffraction

• Acta Cryst B60 (2004), 272-281: Cerny R, Renaudin G, Favre-Nicolin V, Hlukhyy V, Pottgen R Mg_1+xIr_1-x (x=0, 0.037 and 0.054), a binary intermetallic compound with a new orthorhombic structure type determined from powder and single-crystal X-ray diffraction

• Phys Rev Lett. 92 (2004), 186101: Letoublon A, Favre-Nicolin V, Renevier H, Proietti MG, Monat C, Gendry M, Marty O, Priester C Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence x-ray anomalous diffraction

• Mat. Sci For. 443-4 (2004), 35-38: Favre-Nicolin V, Cerny R FOX: Modular approach to crystal structure determination from powder diffraction

• J. Alloys & Comp. 348 (2003), 129-137: Guenee L, Favre-Nicolin V, Yvon K Synthesis, crystal structure and hydrogenation properties of the ternary compounds LaNi4Mg and NdNi4Mg

• J. Appl. Cryst. 35(2002), 734-743: Favre-Nicolin V, Cerny R FOX, 'free objects for crystallography': a modular approach to ab initio structure determination from powder diffraction

• Chem. Comm. 8(2002), 808-809: Edgar M, Carter VJ, Tunstall DP, Grewal P, Favre-Nicolin V, Cox PA, Lightfoot P, Wright PA Structure solution of a novel aluminium methylphosphonate using a new simulated annealing program and powder X-ray diffraction data

• Acta Cryst. C58(2002), i31-i32: Cerny R, Favre-Nicolin V, Bertheville B A tetragonal polymorph of caesium hydroxide monohydrate, CsOH center dot H2O, from X-ray powder data

• Phys. Rev. Lett. 87 (2001), 015502: Favre-Nicolin V, Bos S, Lorenzo JE, Hodeau JL, Berar JF, Monceau P, Currat R, Levy F, Berger H Structural evidence for Ta-tetramerization displacements in the charge-density-wave compound (TaSe4)(2)I from x-ray anomalous diffraction

• Chem. Rev. 101 (2001), 1843-1867: Hodeau JL, Favre-Nicolin V, Bos S, Renevier H, Lorenzo E, Berar JF Resonant diffraction

• J. Appl. Cryst 33(2000), 52-63: Favre-Nicolin V, Bos S, Lorenzo JE, Bordet P, Shepard W, Hodeau JL Integration procedure for the quantitative analysis of dispersive anomalous diffraction